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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 DESCRIPTION *With TO-66 package *Low collector saturation voltage APPLICATIONS *For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 200 120 6 1 15 150 -55~150 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE sat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=500mA; IB=50mA IC=500mA; IB=50mA VCB=120V; IE=0 VEB=6V; IC=0 IC=200mA ; VCE=5V IC=200mA ; VCE=10V 30 5 MIN 120 6 2SC1161 TYP. MAX UNIT V V 1.5 2.0 1.0 1.0 200 V V A A MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1161 Fig.2 outline dimensions 3 |
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